IRLB8743PBF

IRLB8743PBF

MOSFET N-CH 30V 78A TO220AB


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRLB8743PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 941
  • Description: MOSFET N-CH 30V 78A TO220AB (Kg)

Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 92ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 1.8V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 78A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 620A
Dual Supply Voltage 30V
Recovery Time 44 ns
Nominal Vgs 1.8 V
Height 9.02mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 8.7MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 23 ns
See Relate Datesheet

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