| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 4Ohm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 180A |
| Power Dissipation-Max | 210W Tc |
| Element Configuration | Single |
| Power Dissipation | 210W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5090pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 4.5V |
| Rise Time | 140ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 36 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 180A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| Input Capacitance | 5.09nF |
| Drain to Source Resistance | 4.8mOhm |
| Rds On Max | 4 mΩ |
| Nominal Vgs | 3 V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |