IRGS4B60KD1PBF
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 63W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 11A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRGS4B60KD1PBF |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 63W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 23ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 11A |
| Reverse Recovery Time | 93 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 40 ns |
| Test Condition | 400V, 4A, 100 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Turn Off Time-Nom (toff) | 199 ns |
| IGBT Type | NPT |
| Gate Charge | 12nC |
| Current - Collector Pulsed (Icm) | 22A |
| Td (on/off) @ 25°C | 22ns/100ns |
| Switching Energy | 73μJ (on), 47μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| Fall Time-Max (tf) | 89ns |
| Height | 4.699mm |
| Length | 10.668mm |
| Width | 9.652mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet