IRGP50B60PDPBF
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 370W |
| Current Rating | 75A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 370W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 33 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 26ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 140 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 75A |
| Reverse Recovery Time | 50 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Turn On Time | 59 ns |
| Test Condition | 390V, 33A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 50A |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | 75A |
| Turn Off Time-Nom (toff) | 190 ns |
| IGBT Type | NPT |
| Gate Charge | 240nC |
| Current - Collector Pulsed (Icm) | 150A |
| Td (on/off) @ 25°C | 34ns/130ns |
| Switching Energy | 360μJ (on), 380μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 65ns |
| Height | 24.99mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet