IRGP4069D-EPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Package / Case | TO-247-3 |
| JESD-609 Code | e3 |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Subcategory | Insulated Gate BIP Transistors |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Rise Time-Max | 42ns |
| Power Dissipation-Max | 268W |
| Element Configuration | Single |
| Power Dissipation | 268W |
| Case Connection | COLLECTOR |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.85V |
| Max Collector Current | 76A |
| Reverse Recovery Time | 120 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.85V |
| Turn On Time | 78 ns |
| Turn Off Time-Nom (toff) | 188 ns |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 54ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet