IRGP4063D-EPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 330W |
| Base Part Number | IRGP4063D |
| Rise Time-Max | 56ns |
| Element Configuration | Single |
| Power Dissipation | 330W |
| Input Type | Standard |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.14V |
| Max Collector Current | 96A |
| Reverse Recovery Time | 115 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
| Test Condition | 400V, 48A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.14V @ 15V, 48A |
| IGBT Type | Trench |
| Gate Charge | 140nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 60ns/145ns |
| Switching Energy | 625μJ (on), 1.28mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 46ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet