IRGP20B60PDPBF

IRGP20B60PDPBF

IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGP20B60PDPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 110
  • Description: IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 40A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Turn On Time 25 ns
Test Condition 390V, 13A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 138 ns
IGBT Type NPT
Gate Charge 68nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 20ns/115ns
Switching Energy 95μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 17ns
Height 20.3mm
Length 15.9mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2003
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 220W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 220W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 20 ns
Transistor Application POWER CONTROL
Rise Time 5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 115 ns
See Relate Datesheet

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