| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 2 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-XUUC-N2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR |
| Input Type | Logic |
| Transistor Application | AUTOMOTIVE IGNITION |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 430V |
| Current - Collector (Ic) (Max) | 14A |
| Vce(on) (Max) @ Vge, Ic | 2.65V @ 4.5V, 10A |
| Gate-Emitter Thr Voltage-Max | 2.4V |
| RoHS Status | Non-RoHS Compliant |