IRGB4045DPBF

IRGB4045DPBF

IRGB4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRGB4045DPBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 179
  • Description: IRGB4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Number of Elements 1
Element Configuration Single
Power Dissipation 77W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 75 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 38 ns
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Turn Off Time-Nom (toff) 127 ns
IGBT Type Trench
Gate Charge 13nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Height 9.02mm
Length 10.66mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good