IRG7PH42UD-EP
| Parameters | |
|---|---|
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 320W |
| Number of Elements | 1 |
| Rise Time-Max | 41ns |
| Element Configuration | Single |
| Power Dissipation | 320W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 25 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 229 ns |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 85A |
| Reverse Recovery Time | 153 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2V |
| Turn On Time | 51 ns |
| Test Condition | 600V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 444 ns |
| IGBT Type | Trench |
| Gate Charge | 157nC |
| Current - Collector Pulsed (Icm) | 90A |
| Td (on/off) @ 25°C | 25ns/229ns |
| Switching Energy | 2.11mJ (on), 1.18mJ (off) |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 86ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
See Relate Datesheet