IRG6B330UDPBF
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 160W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 160W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.76V |
| Max Collector Current | 70A |
| Reverse Recovery Time | 60 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 330V |
| Turn On Time | 83 ns |
| Test Condition | 196V, 25A, 10 Ω |
| Vce(on) (Max) @ Vge, Ic | 2.76V @ 15V, 120A |
| Turn Off Time-Nom (toff) | 411 ns |
| IGBT Type | Trench |
| Gate Charge | 85nC |
| Td (on/off) @ 25°C | 47ns/176ns |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet