IRG4BH20K-L
| Parameters | |
|---|---|
| Additional Feature | ULTRA FAST, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 60W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 11A |
| Power Dissipation-Max (Abs) | 24W |
| Turn On Time | 51 ns |
| Test Condition | 960V, 5A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) | 720 ns |
| Gate Charge | 28nC |
| Current - Collector Pulsed (Icm) | 22A |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450μJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 400ns |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2017 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
See Relate Datesheet