IRG4BC20WPBF

IRG4BC20WPBF

IRG4BC20WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4BC20WPBF
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 938
  • Description: IRG4BC20WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Turn Off Time-Nom (toff) 300 ns
Gate Charge 26nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 22ns/110ns
Switching Energy 60μJ (on), 80μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 96ns
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Position SINGLE
Current Rating 13A
Number of Elements 1
Element Configuration Dual
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application MOTOR CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 36 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
See Relate Datesheet

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