| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Supplier Device Package | IPAK (TO-251) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 42A |
| Power Dissipation-Max | 110W Tc |
| Power Dissipation | 110W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 66ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 59A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 55V |
| Input Capacitance | 1.38nF |
| Drain to Source Resistance | 14.5mOhm |
| Rds On Max | 14.5 mΩ |
| Height | 6.22mm |
| Length | 6.7056mm |
| Width | 2.3876mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |