IRFU024NPBF
| Parameters | |
|---|---|
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 75mOhm |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 17A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 38W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 34ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 55V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Dual Supply Voltage | 55V |
| Nominal Vgs | 4 V |
| Height | 6.22mm |
| Length | 6.7056mm |
| Width | 2.3876mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet