IRFSL38N20DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 300W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 54m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 43A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
| Rise Time | 95ns |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time (Typ) | 47 ns |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 44A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.054Ohm |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 460 mJ |
| Height | 9.65mm |
| Length | 10.67mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet