| Parameters | |
|---|---|
| Recovery Time | 37 ns |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
| Number of Pins | 7 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 231W Tc |
| Element Configuration | Single |
| Power Dissipation | 231W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7437pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Rise Time | 62ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 51 ns |
| Turn-Off Delay Time | 78 ns |
| Continuous Drain Current (ID) | 195A |
| Threshold Voltage | 2.2V |
| Gate to Source Voltage (Vgs) | 20V |