| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 200W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 58A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 88A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| RoHS Status | ROHS3 Compliant |