| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 64ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 120A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 75V |
| Dual Supply Voltage | 75V |
| Recovery Time | 50 ns |
| Nominal Vgs | 4 V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 5.8MOhm |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 120A |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Power Dissipation | 230W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.8m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |