IRFR2307ZTRLPBF
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 16m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Rise Time | 65ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 42A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 75V |
| Dual Supply Voltage | 75V |
| Recovery Time | 47 ns |
| Nominal Vgs | 4 V |
| Height | 2.3876mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 16MOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 75V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 42A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet