IRFI4019HG-117P
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 Full Pack (Formed Leads) |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 18W |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 18W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 7 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 6.6ns |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time (Typ) | 3.1 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 8.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 34A |
| Avalanche Energy Rating (Eas) | 77 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet