IRFHM831TR2PBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.8m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 12ns |
| Fall Time (Typ) | 4.7 ns |
| Turn-Off Delay Time | 6.2 ns |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 96A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Recovery Time | 22 ns |
| Nominal Vgs | 1.8 V |
| Height | 990.6μm |
| Length | 3.2766mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
See Relate Datesheet