IRFH9310TRPBF
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5250pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 4.5V |
| Rise Time | 47ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | 21A |
| Threshold Voltage | -1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain-source On Resistance-Max | 0.0046Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Nominal Vgs | -1.9 V |
| Height | 950μm |
| Length | 6mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-N3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta |
See Relate Datesheet