| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TQFN Exposed Pad |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.4W Ta 54W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.4W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 83A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6.8 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |