IRFH5006TR2PBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 9.6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4175pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 4.175nF |
| Recovery Time | 42 ns |
| Drain to Source Resistance | 4.1mOhm |
| Rds On Max | 4.1 mΩ |
| Nominal Vgs | 4 V |
| Height | 990.6μm |
| Length | 6.1468mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
See Relate Datesheet