IRFH3707TRPBF
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 29A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V |
| Rise Time | 10.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.7 ns |
| Turn-Off Delay Time | 8.7 ns |
| Continuous Drain Current (ID) | 12mA |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 12 Weeks |
| Drain Current-Max (Abs) (ID) | 12A |
| Mount | Surface Mount |
| Drain to Source Breakdown Voltage | 30V |
| Mounting Type | Surface Mount |
| Pulsed Drain Current-Max (IDM) | 96A |
| Avalanche Energy Rating (Eas) | 13 mJ |
| Package / Case | 8-PowerVDFN |
| Nominal Vgs | 1.8 V |
| Number of Pins | 8 |
| Height | 950μm |
| Length | 3mm |
| Transistor Element Material | SILICON |
| Width | 3mm |
| Operating Temperature | -55°C~150°C TJ |
| Radiation Hardening | No |
| Packaging | Tape & Reel (TR) |
| REACH SVHC | No SVHC |
| Published | 2010 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 12.4MOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12.4m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
See Relate Datesheet