IRFB4020PBF
| Parameters | |
|---|---|
| JEDEC-95 Code | TO-220AB |
| Termination | Through Hole |
| Gate to Source Voltage (Vgs) | 20V |
| ECCN Code | EAR99 |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 52A |
| Dual Supply Voltage | 200V |
| Resistance | 100MOhm |
| Avalanche Energy Rating (Eas) | 94 mJ |
| Subcategory | FET General Purpose Power |
| Recovery Time | 120 ns |
| Nominal Vgs | 4.9 V |
| Height | 9.02mm |
| Technology | MOSFET (Metal Oxide) |
| Length | 10.6426mm |
| Number of Elements | 1 |
| Width | 4.82mm |
| Radiation Hardening | No |
| Power Dissipation-Max | 100W Tc |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Element Configuration | Single |
| Factory Lead Time | 12 Weeks |
| Operating Mode | ENHANCEMENT MODE |
| Mount | Through Hole |
| Power Dissipation | 100mW |
| Mounting Type | Through Hole |
| Turn On Delay Time | 7.8 ns |
| Package / Case | TO-220-3 |
| FET Type | N-Channel |
| Number of Pins | 3 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 18A Tc |
| Packaging | Tube |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Published | 2006 |
| Rise Time | 12ns |
| Part Status | Active |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6.3 ns |
| Number of Terminations | 3 |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 18A |
| Threshold Voltage | 4.9V |
See Relate Datesheet