| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | not_compliant |
| Power Dissipation-Max | 3.8W Ta 79W Tc |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 8.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| RoHS Status | ROHS3 Compliant |