IRF7807ZTRPBF
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 13.8m Ω @ 11A, 10V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 15V |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Operating Temperature | -55°C~150°C TJ |
| Rise Time | 6.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Vgs (Max) | ±20V |
| Series | HEXFET® |
| Fall Time (Typ) | 3.1 ns |
| JESD-609 Code | e3 |
| Turn-Off Delay Time | 10 ns |
| Part Status | Active |
| Continuous Drain Current (ID) | 11A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Number of Terminations | 8 |
| Drain to Source Breakdown Voltage | 30V |
| ECCN Code | EAR99 |
| Nominal Vgs | 1.8 V |
| Resistance | 8.2MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Height | 1.4986mm |
| Voltage - Rated DC | 30V |
| Length | 4.9784mm |
| Technology | MOSFET (Metal Oxide) |
| Width | 3.9878mm |
| Terminal Position | DUAL |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Terminal Form | GULL WING |
| Lead Free | Contains Lead, Lead Free |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 11A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 6.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
See Relate Datesheet