IRF7769L1TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric L8 |
| Number of Pins | 15 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 3.3W Ta 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 44 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 74A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11560pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Ta 124A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 32ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 41 ns |
| Turn-Off Delay Time | 92 ns |
| Continuous Drain Current (ID) | 124A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 375A |
| Drain-source On Resistance-Max | 0.0035Ohm |
| Pulsed Drain Current-Max (IDM) | 500A |
| Avalanche Energy Rating (Eas) | 260 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet