| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric L8 |
| Number of Pins | 15 |
| Supplier Device Package | DIRECTFET L8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.3W Ta 125W Tc |
| Power Dissipation | 3.3W |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 120A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12320pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A Ta 200A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 43ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 39 ns |
| Turn-Off Delay Time | 78 ns |
| Continuous Drain Current (ID) | 200A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 12.32nF |
| Drain to Source Resistance | 1.1mOhm |
| Rds On Max | 1.5 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |