IRF7601TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Turn On Delay Time | 5.1 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 3.8A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Rise Time | 47ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 5.7A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.035Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Height | 860μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet