IRF7526D1TRPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | FETKY™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 1.25W Ta |
| Power Dissipation | 800mW |
| Turn On Delay Time | 9.7 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.3 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | -2A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain to Source Breakdown Voltage | -30V |
| FET Feature | Schottky Diode (Isolated) |
| Height | 910μm |
| Length | 3.048mm |
| Width | 3.048mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet