IRF7506TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| Resistance | 270mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Base Part Number | IRF7506PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 9.7 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 9.3 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | -1.7A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 9.6A |
| Dual Supply Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1 V |
| Height | 910μm |
| Length | 3.048mm |
| Width | 3.048mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet