| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MN |
| Number of Pins | 5 |
| Supplier Device Package | DIRECTFET™ MN |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 9.5MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 80V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 12A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Element Configuration | Single |
| Power Dissipation | 89W |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 9.6A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 80V |
| Dual Supply Voltage | 80V |
| Input Capacitance | 2.06nF |
| Recovery Time | 54 ns |
| Drain to Source Resistance | 7.6mOhm |
| Rds On Max | 9.5 mΩ |
| Nominal Vgs | 3 V |
| Height | 506μm |
| Length | 6.35mm |
| Width | 5.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |