IRF6645TRPBF
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Current Rating | 5.7A |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.2W Ta 42W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 42W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Ta 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.1 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 5.7mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.035Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 45A |
| Avalanche Energy Rating (Eas) | 29 mJ |
| Height | 410μm |
| Length | 3.95mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SJ |
| Number of Pins | 7 |
See Relate Datesheet