IRF6617TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric ST |
| Number of Pins | 5 |
| Supplier Device Package | DIRECTFET™ ST |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 14A |
| Power Dissipation-Max | 2.1W Ta 42W Tc |
| Power Dissipation | 42W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 34ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.7 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 2.35V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 1.3nF |
| Drain to Source Resistance | 6.2mOhm |
| Rds On Max | 8.1 mΩ |
| Nominal Vgs | 2.35 V |
| Height | 620μm |
| Length | 3.95mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet