IRF5210LPBF
| Parameters | |
|---|---|
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -40A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 38A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Rise Time | 63ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 55 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | -40A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Dual Supply Voltage | 100V |
| Nominal Vgs | 4 V |
| Height | 9.652mm |
| Length | 10.54mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
See Relate Datesheet