IRF1405LPBF
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 131A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Rise Time | 190ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 130 ns |
| Continuous Drain Current (ID) | 131A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 55V |
| Input Capacitance | 5.48nF |
| Drain to Source Resistance | 5.3mOhm |
| Rds On Max | 5.3 mΩ |
| Height | 9.65mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Supplier Device Package | TO-262 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 131A |
| Number of Elements | 1 |
| Power Dissipation-Max | 200W Tc |
| Power Dissipation | 200W |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 101A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
See Relate Datesheet