IRF1010NSPBF
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 180W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 43A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet