IRF1010EZLPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 75A |
| Power Dissipation-Max | 140W Tc |
| Power Dissipation | 140W |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.5m Ω @ 51A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2810pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 90ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 54 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 75A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Height | 9.65mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet