IPU50R3K0CEBKMA1
| Parameters | |
|---|---|
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | CoolMOS™ CE |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 18W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 7.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 400mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 30μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 84pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
| Rise Time | 5.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 1.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 500V |
| Drain-source On Resistance-Max | 3Ohm |
| Drain to Source Breakdown Voltage | 550V |
| Pulsed Drain Current-Max (IDM) | 4.1A |
| Avalanche Energy Rating (Eas) | 18 mJ |
| Height | 6.22mm |
| Length | 6.73mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet