IPS50R520CP
| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 66W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 66W |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 520m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 100V |
| Mount | Through Hole |
| Current - Continuous Drain (Id) @ 25°C | 7.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 550V |
| Number of Pins | 3 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~150°C TJ |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 80 ns |
| Packaging | Tube |
| Continuous Drain Current (ID) | 7.1A |
| Published | 2007 |
| Gate to Source Voltage (Vgs) | 20V |
| Series | CoolMOS™ |
| Max Dual Supply Voltage | 500V |
| Pbfree Code | yes |
| Drain-source On Resistance-Max | 0.52Ohm |
| Drain to Source Breakdown Voltage | 500V |
| Part Status | Obsolete |
| Nominal Vgs | 3 V |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
See Relate Datesheet