IPP50R250CPXKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 40 Weeks |
| Mount | Through Hole |
| Package / Case | TO-220 |
| Number of Pins | 3 |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 114W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 500V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 13A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 500V |
| Drain to Source Breakdown Voltage | 500V |
| Input Capacitance | 1.42nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 250mOhm |
| Rds On Max | 250 mΩ |
| Height | 15.95mm |
| Length | 10.36mm |
| Width | 4.57mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet