| Parameters | |
|---|---|
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 80A |
| JEDEC-95 Code | TO-262AA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0057Ohm |
| Input Capacitance | 6.5nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Rds On Max | 5.7 mΩ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Package / Case | TO-262-3 |
| Number of Pins | 3 |
| Weight | 2.387001g |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 60V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 8 ns |