IPG20N10S4L22ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 60W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Power Dissipation | 60W |
| Turn On Delay Time | 5 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 3ns |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 100V |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 175°C |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet