IPG20N04S4L11ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Max Power Dissipation | 41W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 41W |
| Turn On Delay Time | 5 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 11.6m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 15μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 2ns |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 40V |
| Drain-source On Resistance-Max | 0.0116Ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet