Parameters | |
---|---|
Number of Channels | 1 |
Power Dissipation-Max | 278W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 278W |
Turn On Delay Time | 22 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 15.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 800μA |
Input Capacitance (Ciss) (Max) @ Vds | 2670pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 47A Tc |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 47A |
JEDEC-95 Code | TO-252 |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.05Ohm |
Drain to Source Breakdown Voltage | 600V |
Max Junction Temperature (Tj) | 150°C |
Height | 2.5mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 18 Weeks |
Mounting Type | Surface Mount |
Package / Case | 10-PowerSOP Module |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | CoolMOS™ G7 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |