IPD50R650CEAUMA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Package / Case | TO-252-3 |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 47W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| Transistor Application | SWITCHING |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 500V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 6.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 500V |
| Input Capacitance | 342pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 650mOhm |
| Rds On Max | 650 mΩ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet