IPB120N06S402ATMA2

IPB120N06S402ATMA2

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB120N06S402ATMA2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 100
  • Description: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 15750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0024Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 560 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
See Relate Datesheet

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